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INTEGRATED CIRCUITS
DATA SHEET
UAA3202M Frequency Shift Keying (FSK) receiver
Preliminary specification File under Integrated Circuits, IC01 1997 Aug 12
Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
FEATURES * Low cost single-chip FSK receiver * Superheterodyne architecture with high integration level * Few external low cost components * Wide supply voltage range * Low power consumption * Wide frequency range, 150 to 450 MHz * High sensitivity * IF band determined by application * High selectivity * Very low spurious radiation, -60 dBm (meets FTZ 17TR2100) * Automotive temperature range * Power-down mode * SSOP20 package. Applications * Keyless entry systems * Car alarm systems * Remote control systems * Security systems * Telemetry systems * Wireless data transmission * Domestic appliances. QUICK REFERENCE DATA SYMBOL VCC ICC PARAMETER supply voltage supply current for operating mode on operating mode off Psens sensitivity VPWD = 0 V; R2 = 560 VPWD = VCC fi = 433.92 MHz; fmod = 250 Hz square wave; f = 25 kHz; BER 3% 2.0 - - 3.4 3 - CONDITIONS MIN. 3.5 - TYP. GENERAL DESCRIPTION
UAA3202M
The UAA3202M is a fully integrated single-chip receiver, primarily intended for use in VHF and UHF systems employing direct Frequency Shift Keying (FSK) modulation. The UAA3202M incorporates a SAW stabilized local oscillator, balanced mixer, IF amplifier, limiter, Received Signal Strength Indicator (RSSI), RSSI comparator, FSK demodulator, data filter and data slicer. The device features a power-down mode in order to minimize the average receiver supply current.
MAX. 6 4.7 30 -94 V
UNIT
mA A dBm
Tamb
operating ambient temperature
-40
-
+85
C
ORDERING INFORMATION TYPE NUMBER UAA3202M PACKAGE NAME SSOP20 DESCRIPTION plastic shrink small outline package; 20 leads; body width 5.3 mm VERSION SOT339-1
1997 Aug 12
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1997 Aug 12
LIN LFB RSSI DMOD CPC PWD DATA 19 18 PHASE SHIFT Vref BIAS 150 k PHASE DETECTOR BUFFER 150 k 30 k VCC LIMITER AMPLIFIER 50 k 17 16 15 14 13 12 11
BLOCK DIAGRAM
Philips Semiconductors
handbook, full pagewidth FA
VEM MXIN
20
1.4 k
IF AMP
1.5 k
Frequency Shift Keying (FSK) receiver
3
RSSI Vref
1.5 k
MIXER
UAA3202M
OSCILLATOR 4 5 6 7 8 9 10
MHA797
1
2
3
MON MOP
VCC
OSC
OSE
VEO
VEE
COMP
CPB CPA
Preliminary specification
UAA3202M
Fig.1 Block diagram.
Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
PINNING SYMBOL MON MOP VCC OSC OSE VEO VEE COMP CPB CPA DATA PWD CPC DMOD RSSI LFB LIN MXIN VEM FA PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION negative mixer output positive mixer output positive supply voltage oscillator collector oscillator emitter negative supply voltage for oscillator negative supply voltage RSSI comparator output comparator input B comparator input A data output power-down control input comparator input C demodulator frequency adjustment RSSI current output limiter feedback limiter input mixer input negative supply voltage for mixer IF amplifier output
handbook, halfpage
UAA3202M
MON 1 MOP 2 VCC 3 OSC 4 OSE 5 VEO 6 VEE 7 COMP 8 CPB 9 CPA 10
MHA796
20 FA 19 VEM 18 MXIN 17 LIN 16 LFB
UAA3202M
15 RSSI 14 DMOD 13 CPC 12 PWD 11 DATA
Fig.2 Pin configuration.
1997 Aug 12
4
Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
FUNCTIONAL DESCRIPTION The device is based on the superheterodyne architecture incorporating a mixer, local oscillator, IF amplifier, limiter, RSSI, RSSI comparator, FSK demodulator, data filter, data slicer and power-down circuitry. The device employs a low IF frequency of typically 1 MHz in order to allow IF filtering by means of external low cost R, L and C components. If image rejection is required it can be achieved by applying a matching external front-end SAW filter. The device provides a wide IF range of 300 kHz in order to allow the use of a SAW stabilized oscillator. The on-chip local oscillator provides the injection signal for the mixer. Tuning of the on-chip local oscillator is not necessary. The oscillator frequency is determined by an external 1-port SAW resonator. The RF input signal is fed to the mixer and down converted to the IF frequency. After amplification and filtering the RF signal is applied to a limiter. The IF filter order and characteristics are determined by the external low cost R, L and C components. The limiter amplifier provides a RSSI signal which can be routed to an on-chip RSSI level comparator in order to derive a field strength indication for external use. The limited IF signal is fed to the FSK demodulator. The demodulator centre frequency is determined by an external capacitor. No alignment is necessary for the FSK demodulator. After filtering the demodulated data signal is fed to a data slicer and is made available at the data output. The data filter characteristics are determined by external capacitors. The data slicer employs an adaptive slice reference in order to track frequency offsets. The device is switched from power-down to operating mode and vice versa by means of a control input. Extremely low supply current is drawn when the device is in power-down mode. Measures are taken to allow fast receiver settling when the device is switched from power-down to operating mode. Mixer The mixer is a single balanced emitter coupled mixer with internal biasing. Matching of the RF source impedance to the mixer input requires an external matching network. Oscillator The oscillator consists of an on-chip transistor in common base configuration. An external tank and SAW resonator determines the oscillator frequency. Oscillator alignment is not necessary. Oscillator bias is controlled by an external resistor. Post mixer amplifier
UAA3202M
The Post Mixer Amplifier (PMA) is a differential input, single-ended output amplifier. It separates the first and second IF filters from each other. Amplifier gain is provided in order to reduce the influence of the limiter noise figure on the total noise figure. Limiter The limiter is a single-ended input multiple stage amplifier with high total gain. Amplifier stability is achieved by means of an external DC feedback capacitor, which is also used to determine the lower limiter cut-off frequency. An RSSI signal proportional to the limiter input signal is provided. IF filters IF filtering with high selectivity is realized by means of external low cost R, L and C components. The first IF filter is located directly following the mixer output. An external L/C network assembles a band-pass with low sensitivity in order to meet the bandwidth of an elliptic low-pass filter external to the device and is located in front of the limiter. The filter source impedance is determined by the drive impedance of the IF amplifier. In order to improve the IF filter selectivity below the pass-band a high-pass characteristic is added by means of a DC blocking capacitor in front of the limiter input and by means of the limiter DC feedback capacitor. RSSI The RSSI signal is a current proportional to the limiter input level (RF input power). By means of an external resistor the resulting RSSI voltage level is set in order to fit the application. The RSSI voltage is available to external circuits and is fed to the input of the RSSI level comparator. For RSSI filtering an external capacitor is connected. RSSI level comparator The RSSI level comparator compares the RSSI level with a fixed and independent internal reference voltage. If the RSSI level exceeds the internal reference voltage a logic HIGH signal is generated. The level comparator provides some hysteresis in order to avoid spurious oscillation. The output of the level comparator is designed as an open-collector with internal pull-up.
1997 Aug 12
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Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
FSK demodulator The limited IF signal is converted into baseband data by means of a quadrature FM demodulator consisting of an all-pass filter and a mixer stage. No alignment of the demodulator is necessary. The demodulator centre frequency is set by a capacitor external to the device. The demodulator provides a large audio bandwidth in order to allow high data rate applications. The demodulator can detect a small IF frequency deviation even if a relatively large IF frequency offset is encountered. Data filters After demodulation a two-stage data filtering circuit is provided in order to suppress unwanted frequency components. Two R/C low-pass filters with on-chip resistors are provided which are separated by a buffer stage. Data slicer Data detection is provided by means of a level comparator with adaptive slice reference. After the first data filter stage the pre-filtered data is split into two parts. One part passes the second data filter stage and is fed to the positive comparator input.
UAA3202M
The other path is fed to an integration circuit with a large time constant in order to derive the average value (DC component) as an adaptive slice reference which is presented to the negative comparator input. The adaptive reference enables the received data over a large range of demodulator frequency offsets to be detected. The integration circuit consists of a simple R/C low-pass filter with on-chip resistor. The level comparator output is designed as an open-collector with internal pull-up. Power-down circuitry The device provides a power-down mode. While in power-down mode the device disables the majority of the internal circuits and consumes extremely low current. Measures are taken to allow fast receiver settling when normal operation is resumed. Thus circuits with large time constants are only powered down partly or provide a high impedance during power-down in order to avoid the discharge of external capacitors as much as possible. Power-down mode is entered when the control input is active HIGH. The control input provides an internal pull-up resistor of high impedance.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Tamb Tstg Vesd PARAMETER supply voltage operating ambient temperature storage temperature electrostatic handling pins 4 and 5 pins 18 and 19 all other pins Note 1. Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air VALUE 125 UNIT K/W note 1 -2000 -1500 -2000 +1500 +2000 +2000 V V V CONDITIONS MIN. -0.3 -40 -55 MAX. +8.0 +85 +125 V C C UNIT
1997 Aug 12
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Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
DC CHARACTERISTICS VCC = 3.5 V; Tamb = 25 C; for application diagram see Fig.11; unless otherwise specified. SYMBOL Supplies VCC ICC supply voltage supply current for operating mode on operating mode off VPWD(on) VPWD(off) IPWD(on) IPWD(off) Oscillator VOSC(DC) Mixer VMXIN(DC) VMOP(DC) VMON(DC) VFA(DC) Limiter VLIN(DC) VLFB(DC) VRSSI(DC) VDMOD(DC) Data slicer VCPC(DC) VCPA(DC) VCPB(DC) VOH(DAT) VOL(DAT) VOH(RSSI) VOL(RSSI) Notes 1. The given values are valid for the whole temperature range from Tamb = -40 to +85 C. 2. Tune RF input frequency until IF = 1 MHz. DC operating point pin 13 DC operating point pin 10 DC operating point pin 9 HIGH-level data output voltage LOW-level data output voltage HIGH-level comparator output voltage LOW-level comparator output voltage note 2 note 2 note 2 IDATA = -10 A IDATA = 200 A IRSSI = -10 A IRSSI = 200 A 1.43 1.43 1.43 0 1.93 1.93 1.93 - DC operating point pin 17 DC operating point pin 16 DC operating point pin 15 DC operating point pin 14 3.45 2.76 2.21 1.63 3.49 2.81 2.36 1.83 DC operating point pin 18 DC operating point pin 2 DC operating point pin 1 DC operating point pin 20 0.68 2.78 2.78 2.14 0.78 2.98 2.98 2.27 DC operating point pin 4 3.28 3.34 PWD voltage for operating mode ON PWD voltage for operating mode OFF PWD current for operating mode ON PWD current for operating mode OFF VPWD = 0 V VPWD = VCC note 1 VPWD = 0 V; R2 = 560 VPWD = VCC 2.0 - 0 -30 - 3.4 3 - -10 1 3.5 - 6 PARAMETER CONDITIONS MIN. TYP.
UAA3202M
MAX.
UNIT
V mA A mV V A A V V V V V V V V V V V V V V V V
4.7 30 300 VCC -3 3 3.40 0.88 3.18 3.18 2.40 3.50 2.86 2.51 2.03 2.43 2.43 2.43 VCC 0.6 VCC 0.6
VCC - 0.3 -
Post mixer amplifier
Demodulator
VCC - 0.5 -
RSSI comparator VCC - 0.5 - 0 -
1997 Aug 12
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Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
UAA3202M
AC CHARACTERISTICS VCC = 3.5 V; Tamb = 25 C; for application diagram see Fig.11; fi = 433.92 MHz; f = 25 kHz; fmod = 250 Hz square wave, i.e. 500 bits/s; unless otherwise specified. SYMBOL System performance Psens Pi(max) rad tst BIF fD Mixer Gmix Ro(mix) IP3PMA GPMA P<1dB BWPMA RoPMA Limiter Glim Blim Ri(lim) GDMOD fc(DMOD) f Ro(DMOD) Data slicer BDS Ro(DS) Vo(RSSI) Vo(COMP) Pth(on) Phys(W) Notes 1. Measured at the RF input connector of the test board. 2. Measured at test point A in Fig.11. 1997 Aug 12 8 data slicer bandwidth data slicer output resistance RSSI output voltage COMP output voltage threshold for switching COMP output voltage to HIGH hysteresis width of COMP output voltage see Fig.3 see Fig.4 35 120 - - 50 150 - - - 180 - - kHz k - - limiter gain limiter LP cut-off frequency limiter input resistance demodulator gain demodulator centre frequency frequency deviation demodulator output resistance note 2 60 2 40 0.8 800 20 24 63.5 5 50 1 1000 25 30 67 8 60 1.2 1200 70 36 dB MHz k mV --------kHz kHz kHz k mixer conversion gain mixer output resistance interception point (mixer + PMA) PMA gain compression (mixer + PMA) PMA LP cut-off frequency PMA output resistance note 2 note 2 Pi = -45 dBm 31 2.7 -38 9 0 5 1.2 33 3 -35 10.4 - - 1.4 35 3.3 - 12 1 - 1.6 dB k dBm dB dBm MHz k sensitivity maximum input power spurious radiation receiver settling time IF bandwidth range data frequency BER 3% BER 3% note 1 Pi = Psens + 10 dB; see Fig.5 Pi = Psens + 3 dB - - - - 850 140 - - - 2 1000 - -94 -30 -60 5 1150 250 dBm dBm dBm ms kHz Hz PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Post mixer amplifier
Demodulator
RSSI comparator
-99.5 -95.5 -91.5 dBm 1 2 4 dBm
Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
UAA3202M
handbook, full pagewidth
2.8 Vo(RSSI) (V) 2.7
(1)
(2)
2.6
(3)
2.5
2.4
-100
-90
-80
-70
-60 Pi (dBm)
-50
MHA811
(1) Tamb = 85 C. (2) Tamb = 25 C. (3) Tamb = -40 C.
Fig.3 RSSI output voltage as a function of RF input power.
handbook, halfpage
MHA812
Vo(COMP) (V) 3.0
Phys(W)
0.6 -97.5 -95.5 Pth(ON) Pi (dBm)
Fig.4 Comparator output voltage as a function of HF input power.
1997 Aug 12
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Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
INTERNAL CIRCUITRY Table 1 PIN 1 2
UAA3202M
Equivalent pin circuits and pin voltages for rough test of printed circuit board; VCC = 3.5 V; no input signal SYMBOL MON MOP DC VOLTAGE (V) 2.98 2.98
1.5 k 1.5 k 1
EQUIVALENT CIRCUIT
VCC
2 VEE
MHA798
VEM
3 4 5
VCC OSC OSE
- 3.34 -
4
5 6 k VEE
MHA799
6 7 8
VEO VEE COMP
0 0 -
VCC
1 k 8
VEE
MHA800
9 10
CPB CPA
1.93 1.93
9 150 k 150 10
MHA801
VCC
VEE
1997 Aug 12
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Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
UAA3202M
PIN 11
SYMBOL DATA
DC VOLTAGE (V) -
EQUIVALENT CIRCUIT
VCC
1 k 11
VEE
MHA802
12
PWD
-
VCC
300 k 12
MHA803
13
CPC
1.93
VCC
30 k 13
MHA804
VEE
14
DMOD
1.83
VCC
14 VEE
MHA805
1997 Aug 12
11
Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
UAA3202M
PIN 15
SYMBOL RSSI
DC VOLTAGE (V) 2.36
EQUIVALENT CIRCUIT
VCC
MHA806
15
16
LFB
2.81
VCC
16
MHA807
VEE
17
LIN
3.49
50 k 17
VCC
MHA808
VEE
1997 Aug 12
12
Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
UAA3202M
PIN 18 19
SYMBOL MXIN VEM
DC VOLTAGE (V) 0.78 0
EQUIVALENT CIRCUIT
18
15 19
MHA809
20
FA
2.27
VCC
1.2 k 20
VEE
MHA810
1997 Aug 12
13
Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
TEST INFORMATION Tuning procedure for AC tests 1. Turn on the signal generator (fi = 433.92 MHz; no modulation; RF input level = -60 dBm). 2. Tune C6 (RF stage input) to obtain a peak voltage on test point A (see Fig.11).
UAA3202M
3. Turn on modulation (fi = 433.92 MHz; fmod = 250 Hz square wave; f = 25 kHz; RF input level = -60 dBm). 4. Check that data is appearing on the data output (pin 11) and proceed with the AC tests. AC test conditions Table 2 Test signals The reference signal level Pref for the following tests is defined as the minimum input level in dBm to give a BER 3 x 10-2 (e.g. 15 bit errors per second for 500 bits/s). TEST SIGNAL 1 2 3 FREQUENCY (MHz) 433.92 433.92 433.82 DATA SIGNAL 250 Hz square wave - - MODULATION FM (FSK) no modulation no modulation FREQUENCY DEVIATION 25 kHz - -
Table 3 Test results P1 is the maximum available power from signal generator 1 at the input of the test board; P2 is the maximum available power from signal generator 2 at the input of the test board. GENERATOR TEST 1 Sensitivity into pin MXIN (see Fig.6) Maximum input power (see Fig.6) Receiver turn-on time; note 1 modulated test signal 1; P1 -94 dBm modulated test signal 1; P1 -30 dBm (minimum Pmax) test signal 1; P1 = Pref + 10 dB test signal 3; P1 = -55 dBm - - - 2 BER 3 x 10-2 (e.g. 15 bit errors per second for 500 bits/s) BER 3 x 10-2 (e.g. 15 bit errors per second for 500 bits/s) check that the first 10 bits are correct; error counting is started 10 ms after PWD switched to operating mode: ON IP3 = P1 + 12 x IM3 (dB); IP3 -38 dBm no spurious radiation (25 MHz - 1 GHz) with level higher than -60 dBm (maximum Pspur) (Po1 + 70 dB) - [Po2 + 45 dB (minimum P1 dB)] 1 dB, where Po1, Po2 is the output power for test signals with P11 or P12, respectively RESULT
-
Intercept point (mixer + PMA) see note 2 and Fig.7 Spurious radiation see note 3 and Fig.8 1 dB compression point (mixer + PMA) see note 2 and Fig.9 Notes
test signal 2; P2 = P1 -
test signal 3; P11 = -70 dBm; P12 = -45 dBm (minimum P1dB)
-
1. The power-down voltage VPWD alternates between operating mode ON (100 ms) and OFF (100 ms); see Fig.5. 2. Probe of spectrum analyzer connected to test point A. 3. Spectrum analyzer connected to the input of the test board.
1997 Aug 12
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Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
UAA3202M
handbook, full pagewidth
VPWD (V) 3.5
MHA834
0 0 100 200 300 400 500 t (ms)
Fig.5 Timing diagram for pulsed power-down voltage.
GENERATOR 1 50 TEST CIRCUIT (1) BER TEST FACILITY (2)
MED900
(1) For test circuit see Fig.11. (2) For BER test facility see Fig.10.
Fig.6 Test configuration A (single generator).
GENERATOR 1 50
50 2-SIGNAL POWER COMBINER GENERATOR 2 50
TEST CIRCUIT (1)
SPECTRUM ANALYZER WITH PROBE
IM3
f
f f = 100 kHz
f
MED901
(1) For test circuit see Fig.11.
Fig.7 Test configuration B (IP3).
1997 Aug 12
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Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
UAA3202M
SPECTRUM ANALYZER INPUT IMPEDANCE 50
TEST CIRCUIT (1)
MED902
(1) For test circuit see Fig.11.
Fig.8 Test configuration C (spurious radiation).
GENERATOR 1 50 TEST CIRCUIT (1)
SPECTRUM ANALYZER WITH PROBE
MED903
(1) For test circuit see Fig.11.
Fig.9 Test configuration D (1 dB compression point).
SIGNAL GENERATOR
TX data
MASTER CLOCK
BIT PATTERN GENERATOR
DEVICE UNDER TEST
delayed TX data
PRESET DELAY
RX data
INTEGRATE AND DUMP
DATA COMPARATOR BER TEST BOARD
MED904
to error counter
Fig.10 BER test facility.
1997 Aug 12
16
andbook, full pagewidth
1997 Aug 12
C11 L3 C10 VCC power-down C19 C25 C22 C17 C12 C23 R4 data output test point A 19 18 PHASE SHIFT Vref BIAS 150 k LIMITER AMPLIFIER BUFFER MIXER RSSI Vref OSCILLATOR 4 5 6 7 8 9 10
MHA814
C8
C9
L2
Philips Semiconductors
C20
APPLICATION INFORMATION
C5
C4
L1 17 16 15 14 13 12
C6 11
20
1.4 k VCC PHASE DETECTOR 30 k 150 k 50 k
PMA
Frequency Shift Keying (FSK) receiver
1.5 k
17
UAA3202M
C24 C18
(1)
1.5 k
VCC
1
2
3
C7
C14
C13
L5 L4 R3 C16 R2
COMP
VCC
C1
C3
C2
SAWR 432.92 MHz
(1) Stray inductance.
Preliminary specification
UAA3202M
Fig.11 Application diagram.
Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
Table 4 Application component list for Fig.11 VALUE 560 220 820 k 4.7 F 150 pF 100 nF 100 pF 2.7 pF 3 to 10 pF 56 pF 33 pF 100 pF 5.6 pF 100 pF 100 nF 2.2 nF 33 nF 3.9 pF 10 nF 1.8 pF 39 pF 3.3 pF 18 pF 47 nF 22 pF 1 nF 10 nH 150 H 220 H 33 nH 470 H TOLERANCE 2% 2% 2% 20% 10% 10% 10% 10% - 10% 10% 10% 10% 10% 10% 10% 10% 10% 10% 10% 10% 10% 5% 10% 5% 10% 10% 10% 10% 10% 10% TC = 50 ppm/K TC = 50 ppm/K TC = 50 ppm/K - DESCRIPTION
UAA3202M
COMPONENT R2 R3 R4 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C16 C17 C18 C19 C20 C22 C23 C24 C25 L1 L2 L3 L4 L5 Table 5
TC = 0 30 ppm/K; tan 10 x 10-4; f = 1 MHz TC = 0 30 ppm/K; tan 10 x 10-4; f = 1 MHz TC = 0 30 ppm/K; tan 10 x 10-4; f = 1 MHz TC = 0 150 ppm/K; tan 30 x 10-4; f = 1 MHz TC = 0 300 ppm/K; tan 20 x 10-4; f = 1 MHz TC = 0 30 ppm/K; tan 10 x 10-4; f = 1 MHz TC = 0 30 ppm/K; tan 10 x 10-4; f = 1 MHz TC = 0 30 ppm/K; tan 10 x 10-4; f = 1 MHz TC = 0 30 ppm/K; tan 20 x 10-4; f = 1 MHz TC = 0 30 ppm/K; tan 10 x 10-4; f = 1 MHz tan 25 x 10-3; f = 1 kHz tan 25 x 10-3; f = 1 kHz tan 25 x 10-3; f = 1 kHz TC = 0 150 ppm/K; tan 30 x 10-4; f = 1 MHz tan 25 x 10-3; f = 1 kHz TC = 0 150 ppm/K; tan 30 x 10-4; f = 1 MHz TC = 0 30 ppm/K; tan 10 x 10-4; f = 1 MHz TC = 0 150 ppm/K; tan 30 x 10-4; f = 1 MHz TC = 0 30 ppm/K; tan 10 x 10-4; f = 1 MHz tan 25 x 10-3; f = 1 kHz TC = 0 30 ppm/K; tan 10 x 10-4; f = 1 MHz tan 25 x 10-3; f = 1 kHz Qmin = 50 to 450 MHz; TC = 25 to 125 ppm/K Qmin = 45 to 800 kHz; Cstray 1 pF Qmin = 45 to 800 kHz; Cstray 1 pF Qmin = 45 to 450 MHz; TC = 25 to 125 ppm/K Qmin = 45 to 800 kHz; Cstray 1 pF
Surface Acoustic Wave Resonator (SAWR) data DESCRIPTION SPECIFICATION one-port 432.92 MHz 75 kHz 1.5 dB 1600 (50 load) 0.032 ppm/K2 43 C 18
Type Centre frequency Maximum insertion loss Typical loaded Q Temperature drift Turnover temperature 1997 Aug 12
Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
LAYOUT OF PRINTED-CIRCUIT BOARD FOR AC APPLICATION
handbook, full pagewidth
UAA3202M
a. Copper side.
C5 L3 C11 C6 C19 C10 C9 C20 L2 L5 C2 C3 VCC C1 SAWR R3 L4 C8
C12
L1 R4 C23 C22 C17 C25 DATA
C4
C13 UAA3202M C14
C18 C24 C21
POWER DOWN COMP
C7
R2 C16
MHA813
b. Component side. Fig.12 Printed-circuit board layout.
1997 Aug 12
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Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm
UAA3202M
SOT339-1
D
E
A X
c y HE vMA
Z 20 11
Q A2 pin 1 index A1 (A 3) Lp L 1 e bp 10 wM detail X A
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2.0 A1 0.21 0.05 A2 1.80 1.65 A3 0.25 bp 0.38 0.25 c 0.20 0.09 D (1) 7.4 7.0 E (1) 5.4 5.2 e 0.65 HE 7.9 7.6 L 1.25 Lp 1.03 0.63 Q 0.9 0.7 v 0.2 w 0.13 y 0.1 Z (1) 0.9 0.5 8 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT339-1 REFERENCES IEC JEDEC MO-150AE EIAJ EUROPEAN PROJECTION
ISSUE DATE 93-09-08 95-02-04
1997 Aug 12
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Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
UAA3202M
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1997 Aug 12
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Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
UAA3202M
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Aug 12
22
Philips Semiconductors
Preliminary specification
Frequency Shift Keying (FSK) receiver
NOTES
UAA3202M
1997 Aug 12
23
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/1200/01/pp24
Date of release: 1997 Aug 12
Document order number:
9397 750 02306

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